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SECURITY CODE Spec. NAME
A
Prepared by Checked by Approved by DATE
Customer's Std. Spec.
MITSUBISHI ELECTRIC CORPORATION S.Iura F S.Iura G S.Iura R H.Yamaguchi I.Umezaki I.Umezaki E M.Yamamoto H.Yamaguchi H.Yamaguchi V 7-Oct.-2002 18-May-2004 20-May-2004
H S.Iura I.Umezaki H.Yamaguchi 5-Oct.-2004
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
1. 2. 3. 4. 5. Type Number Structure Application & Customer Outline Related Specifications
CM600HG-130H
Flat base type (Insulated package, AlSiC base plate) High power converters & Inverters for traction application See Fig. 1
Fig. 1 - Outline drawing
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
6.
Maximum Ratings
Item Symbol VCES VGES IC ICM IE IEM PC Viso Qpd Tj Tstg Top -- -- -- Conditions VGE = 0 V, Tj = -40 C VGE = 0 V, Tj = +25 C VGE = 0 V, Tj = +125 C VCE = 0 V, Tj = 25 C DC, Tc = 80 C Pulse (note 1) Pulse (note 1) Tc = 25 C, IGBT part (note 3) Charged part to the baseplate RMS sinusoidal, 60Hz 1min. V1 = 6900 Vrms, V2 = 5100 Vrms 60 Hz (acc. to IEC 1287) -- -- -- VCC 4500 V VGE = 15 V, Tj = 125 C
[See Fig. 2 (a)]
6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9
Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (note 2) Maximum Collector dissipation Isolation voltage Partial discharge Junction temperature Storage temperature
Ratings 5800 6300 6500 20 600 1200 600 1200 8900 10200 10 -40 ~ +150 -40 ~ +125 -40 ~ +125 1200 10 3600
Unit V V A A W V pC C C C A s kW
6.10 Operating temperature 6.11 Maximum turn-off switching current 6.12 Short circuit capability (maximum pulse width) 6.13 Maximum reverse recovery instantaneous power (note 2)
Note 1. Note 2. Note 3.
VCC 4500 V VGE = 15 V, Tj = 125 C
VCC 4500 V die/dt 3000 A/s, Tj = 125 C
[See Fig. 2 (a)]
[See Fig. 2 (b)]
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C).
7.
Electrical Characteristics
Item Symbol ICES VGE(th) IGES Conditions VCE = VCES VGE = 0 V
Tj = 25 C Tj = 125 C
Limits
Min. Typ. Max.
Unit mA V A
7.1 7.2 7.3
Collector cutoff current Gate-emitter threshold voltage Gate leakage current
-- -- 5.0 --
-- 30 6.0 --
10 90 7.0 0.5
IC = 60 mA, VCE = 10 V Tj = 25 C VGE = VGES, VCE = 0 V Tj = 25 C
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
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(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
Item 7.4 7.5 7.6 7.7 7.8 7.9 Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage (note 2)
Symbol VCE(sat) Cies Coes Cres QG VEC td(on) tr Eon td(off) tf1 tf2 Eoff trr1 trr2 Qrr Erec
Conditions IC = 600 A (note 4) Tj = 25 C VGE = 15 V Tj = 125 C
f = 100 kHz, Tj = 25 C f = 100 kHz, Tj = 25 C
Limits
Min. Typ. Max.
Unit V nF nF nF C V s s J/P s s s J/P s s C J/P
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
5.10 5.00 124 7.6 2.2 9.9 4.00 3.60 1.20 0.35 4.50 6.60 0.50 3.30 3.50 1.00 2.40 1100 2.00
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
VCE = 10 V, VGE = 0 V
VCE = 10 V, VGE = 0 V
VCE = 10 V, VGE = 0 V f = 100 kHz, Tj = 25 C VCC = 3600 V, IC = 600 A VGE = 15 V, Tj = 25 C IE = 600 A (note 4) VGE = 0 V
Tj = 25 C Tj = 125 C
7.10 Turn-on delay time 7.11 Turn-on rise time 7.12 Turn-on switching energy 7.13 Turn-off delay time 7.14 Turn-off fall time 7.15 Turn-off fall time 7.16 Turn-off switching energy 7.17 Reverse recovery time (note 2) 7.18 Reverse recovery time (note 2) 7.19 Reverse recovery charge (note 2) 7.20 Reverse recovery energy
Note 4. Note 5.
IC
(note 2)
VCC = 3600 V, IC = 600 A VGE1 = -VGE2 = 15 V RG(on) = 10 , Tj = 125 C toff = 60 s (note 5) Inductive load
[See Fig. 2 (a), Fig. 3]
VCC = 3600 V, IC = 600 A VGE1 = -VGE2 = 15 V RG(off) = 24 , Tj = 125 C t(IGBT_off) = 60 s (note 5) Inductive load
[See Fig. 2 (a), Fig. 3]
VCC = 3600 V, IE = 600 A die/dt = -2000 A/s Tj = 125 C toff = 60 s (note 5) Inductive load
[See Fig. 2 (a), Fig. 4]
Pulse width and repetition rate should be such as to cause negligible temperature rise. t(IGBT_off) definition is shown as follows.
time t(IGBT_off)
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
8.
Thermal Characteristics
Item Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Conditions
Junction to case IGBT part Junction to case FWDi part Case to fin Conductive grease applied
(note 6)
Limits
Min. Typ. Max.
Unit K/kW K/kW K/kW
8.1 8.2 8.3
Note 6.
Thermal resistance Thermal resistance (note 2) Contact thermal resistance
-- -- --
-- -- 6.0
14.0 22.0 --
Thermal conductivity is 1W/mK with a thickness of 100m.
9.
Mechanical Characteristics
Item Symbol -- -- -- -- CTI -- -- LC-E(int) RC-E(int) Tc = 25 C Conditions
Main terminal screw : M8 Mounting screw : M6 Auxiliary terminal screw : M4
Limits
Min. Typ. Max.
Unit N*m N*m N*m kg -- mm mm nH m
9.1 9.2 9.3 9.4 9.5 9.6 9.7 9.8 9.9
Mounting torque Mounting torque Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance
7.0 3.0 1.0 -- 600 26.0 56.0 -- --
-- -- -- 1.35 -- -- -- 18 0.18
15.0 6.0 3.0 -- -- -- -- -- --
-- -- -- -- --
10. Shipping Inspection Report Item (note 7)
Static characteristics : Switching characteristics :
Note 7.
ICES [7.1], VGE(th) [7.2], IGES [7.3], VCE(sat) [7.4], VEC [7.9] td(on) [7.10], tr [7.11], td(off) [7.13], tf [7.14], Short circuit current [6.11]
One shipping inspection report with the above item values is submitted when modules are delivered. The conductions are defined in bracket.
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
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(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
11. Test Circuit & Definition of Switching Characteristics
LS1 = 500 nH
DUT: diode Rg VGE3 LLOAD C = 1 mF DUT: IGBT Rg VGE1 VGE2 CS = 25 uF VCC LS2 = 150 nH
Fig. 2 (a) - Switching test circuit
LS = 100 nH
CS = 25 uF DUT: IGBT Rg VGE1 VGE2
C = 1 mF
VCC
Fig. 2 (b) - Short circuit test circuit
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
IGBT part: turn-on switching
VGE
IGBT part: turn-off switching
90%VGE
10%VGE 0
VCC
IC 90%IC di 50%IC 10%IC 0 td(on) ton tr td(off) 10%VCE VCE 10%VCE dt tf2 10%IC 90%IC
Eon =
t2 ic*vce dt t1
t3 t4 toff
Eoff =
t4 ic*vce dt t3
t1
t2
tf1 = (0.9ic - 0.1ic) / (di/dt)
Fig. 3 - Definitions of switching times & energies of IGBT part
Diode part: reverse recovery
Qrr = -
di/dt VEC (VR) trr1 10%IE
IE (IF)
t6 ie dt 0 t6 ie*vec dt t5
0 Irr
di
Erec = -
dt 0 10%VEC
trr2 t5 t6
Fig. 4 - Definitions of reverse recovery charge & energy of FWDi part
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
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(HV-SETSU)
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MITSUBISHI ELECTRIC CORPORATION
Rev. No. - A Original
Summary of changes
Signature & date S.Iura 7-Oct.-2002 S.Iura 20-Dec.-2002
The following items changed. 6.1, 6.3, 6.4 The following item changed. 6.3 The following item added. 6.6 The following items changed. 7.4, 7.9, 7.17 The following items added. 6.11, 6.12, 6.13, 7.10, 7.11, 7.12, 7.13, 7.14, 7.15, 8.3, 9.1, 9.2, 9.3, 9.4, 9.5, 9.6, 9.7, 10 The following items changed. 4, 7.9, 7.10, 7.11, 7.14, 7.15, 7.16, 7.17, 7.18 The following items added. 7.5, 7.6, 7.7, 10 The following items changed. 7.4, 7.9, 7.16 The following items added. 7.14, 7.17, 9.9, Note 5, Fig. 2 (a), Fig. 2 (b) The following items changed. 7.13, 7.15, 7.16, 7.20 The following items added. 9.8 The following item changed. 6.13 The following items changed. 7.2, 7.4, 7.8, 7.9, 7.13, 7.15, 7.16, 7.19, 7.20, 8.2, 9.1, 9.3, 9.4
B
S.Iura 31-Mar.-2003
C
S.Iura 10-Dec.-2003
D
S.Iura 22-Jan.-2004
E
S.Iura 26-Jan.-2004
F
S.Iura 17-May-2004
G
S.Iura 20-May-2004 S.Iura 1-Oct.-2004
H
HIGH VOLTAGE IGBT MODULE TARGET SPECIFICATION
HCM-1002-H
(HV-SETSU)
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